SAMSUNG Develops World's Highest Density DRAM Chip

Samsung just announced the development of a low-power 4Gb DDR3 DRAM chip, using 50 nanometer process technology.

This is great news for the new generation of Green data centers as the 4Gb DDR3's high density will require lower levels of power consumption and along with quad-core low power microprocessors help facilitate server consolidation.

We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities. By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market - Kevin Lee, VP, technical marketing, Samsung Semiconductor.

The 4Gb DDR3 can be produced in 16 gigayte registered dual in-line memory modules RDIMM for servers, as well as 8GB unbuffered DIMM UDIMM for desktop PCs, and 8GB small outline DIMM SODIMM for laptops

Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts improving its throughput by 20 percent over a 1.5V DDR3. Its maximum speed is 1.6 gigabits per second.